Radiation tolerant complementary MOS logic for bipolar/CMOS inte

Details Radiation tolerant complementary MOS logic for bipolar/CMOS inte Radiation tolerant complementary MOS logic for bipolar/CMOS inte

1991-09-23

1993-06-15

Dzierzynski, Paul M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 34, 357 42, 357 43, 257565, 257378, H01L 2500

Patent

active

052202186

ABSTRACT:
A novel double diffused complementary MOS (DCMOS) logic family is disclosed which allows greater tolerance to total dose gamma radiation. The logic family may be fabricated in conventional power BiCMOS IC technology in which complementary power DMOS output devices and Bi-polar transistors are integrated with high performance complementary MOS devices to perform both digital and analog functions. The incorporation is achieved without the additional masks or process modifications normally required for improving radiation tolerance.

REFERENCES:
patent: 4225877 (1980-09-01), Miles et al.
patent: 4764480 (1988-08-01), Vora

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