Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-09-19
2006-09-19
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S3960ML, C430S005000, C430S395000, C359S291000, C359S290000, C355S067000, C355S053000
Reexamination Certificate
active
07109498
ABSTRACT:
A radiation source for use in lithography. The radiation source comprising a pn-junction disposed on a substrate that can be reverse-biased to cause avalanche breakdown and emission of UV or DUV radiation by deceleration of electrons accelerated into an n-type region of the pn-junction. The radiation source can have a low operating voltage, a high switching speed, and provides great design freedom. High intensity can be provided, e.g., by the use of large or multiple sources. The pn-junction can be doped with impurities to increase emission of radiation at a desired frequency and increase the efficiency of the device. For protection, the pn-junction may be covered by a layer of transparent oxide. By reverse biasing the pn-junction with a potential difference at least 4V, radiation of wavelength 300 nm or less can be obtained. The pn-junction source of the present invention can replace conventional radiation sources and be using in connection with a mask/contrast device, or can be used to replace both the conventional radiation source and the mask/contrast device.
REFERENCES:
patent: 5051738 (1991-09-01), Tanielian et al.
patent: 5229872 (1993-07-01), Mumola
patent: 5296891 (1994-03-01), Vogt et al.
patent: 5500736 (1996-03-01), Koitabashi et al.
patent: 5523193 (1996-06-01), Nelson
patent: 5530482 (1996-06-01), Gove et al.
patent: 5579147 (1996-11-01), Mori et al.
patent: 5677703 (1997-10-01), Bhuva et al.
patent: 5808797 (1998-09-01), Bloom et al.
patent: 5982553 (1999-11-01), Bloom et al.
patent: 6111271 (2000-08-01), Snyman et al.
patent: 6133986 (2000-10-01), Johnson
patent: 6177980 (2001-01-01), Johnson
patent: 6262845 (2001-07-01), Sweatt
patent: 6365951 (2002-04-01), Worley
patent: 6608360 (2003-08-01), Starikov et al.
patent: 6687041 (2004-02-01), Sandstrom
patent: 6747783 (2004-06-01), Sandstrom
patent: 6795169 (2004-09-01), Tanaka et al.
patent: 6806897 (2004-10-01), Kataoka et al.
patent: 6811953 (2004-11-01), Hatada et al.
patent: 6897941 (2005-05-01), Almogy
patent: 2004/0041104 (2004-03-01), Liebregts et al.
patent: 2004/0130561 (2004-07-01), Jain
patent: 2005/0007572 (2005-01-01), George et al.
patent: 1 231 514 (2002-08-01), None
patent: 5-136456 (1993-09-01), None
patent: WO 98/33096 (1998-07-01), None
patent: WO 98/38597 (1998-09-01), None
English-language Abstract of JP 01-179581, published Jul. 17, 1989, 1 page.
N. Akil et al., Modeling of Light-Emission Spectra Measured on Silicon Nanometer-Scale Diode Antifuses, Aug. 15, 2000, pp. 1916-1922.
Intergrated Publishing, Special Devices, www.tpub.com
eets/book7/26.htm, pp. 1-9.
Copy of Partial European Search Report for European Appln. 03256370.2 dated Aug. 6, 2004, 12 pages.
Copy of European Search Report for European Appln. 03256370.2, dated Sep. 30, 2004, 7 pages.
English-language Abstract of JP 05-136456, published Jun. 1, 1993, 1 page.
ASML Netherlands B.V.
Hashmi Zia R.
Lee John R.
Sterne Kessler Goldstein & Fox P.L.L.C.
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