Radiation sensitive transducer wherein deformation due to temper

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257 99, 257466, 438 64, H01L 310203, H01L 3100

Patent

active

060376422

ABSTRACT:
A radiation-sensitive transducer with a doped semiconductor sensor is to be constructed on a mounting plate such that it does not deform during temperature fluctuations. On the back side of the mounting plate, i.e., the side opposite the side on which the semiconductor sensor is mounted, an additional element having the same dimensions as the semiconductor sensor is attached opposite the semiconductor sensor. The additional element is composed of the same semiconductor material as of the semiconductor sensor, but is undoped. Due to the corresponding size and material of the semiconductor sensor and the additional element, they respectively produce equal but opposite forces acting on the mounting plate during temperature fluctuations, so no deformation occurs.

REFERENCES:
patent: 4775895 (1988-10-01), Traupe et al.
patent: 4810881 (1989-03-01), Berger et al.
patent: 5298742 (1994-03-01), Friauf et al.
"Silicon Detector System for High Rate EXAFS Applications," Pullia et al., IEEE Trans. On Nucl. Sci., vol. 42, No. 4, Aug. 1995, pp. 585-586.

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