Radiation-sensitive semiconductor device having reduced capacita

Details Radiation-sensitive semiconductor device having reduced capacita Radiation-sensitive semiconductor device having reduced capacita

1984-07-02

1987-03-24

Davie, James W.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 16, 357 20, 357 30, 250370, H01L 2714, H01L 3100

Patent

active

046528997

ABSTRACT:
The capacitance of a radiation-sensitive diode can be considerably reduced by giving it the form of a pn junction (4) between a first semiconductor region (4) and a layer-shaped semiconductor zone, which in operation is fully depleted. The speed of such a diode is favorably influenced by the choice or the shape of the geometry of the layer-shaped zone. When the latter is formed with parts decreasing in width of thickness, an electric field is produced in these parts which accelerates the transport of minority charge carriers to a central contact.

REFERENCES:
patent: 3501678 (1970-03-01), Schuler
patent: 4394676 (1983-07-01), Agouridis

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