Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1990-06-27
1992-03-17
Mintel, William
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
357 32, 357 43, 250211J, 369 4436, 369 4437, H01L 2714
Patent
active
050973070
ABSTRACT:
A radiation-sensitive semiconductor device comprises a semiconductor body having a first semiconductor region of a first conductivity type, which adjoins with one side a surface of the semiconductor body and adjoins within it at a certain distance from and substantially parallel to the surface a second semiconductor region of a second conductivity type opposite to the first type and forms with it a first pn junction. Such semiconductor devices are used in a reading or writing unit for a system for optical recording, such as CD, LV, DOR and CDV.
In one embodiment having a semiconductor region at least two further regions are present, which are located at the surface and each form with the first semiconductor region a further pn junction substantially parallel to the surface and at a smaller distance therefrom than the first pn junction. Moreover, the further regions, like the first semiconductor region, are coupled to reading members, by means of which a current can be measured. As a result, the further semiconductor regions can be thin and can therefore be arranged close to each other so that a focus error signal without a dip is obtained via the reading members coupled to these regions. Since the further regions result in diodes having an inverse polarity, class B amplifiers based on npn transistors may now be integrated in with the semiconductor device so that a separation circuit requiring comparatively large capacitances is no longer necessary.
REFERENCES:
patent: 3786264 (1974-01-01), Ferro et al.
patent: 4663749 (1987-05-01), Bierhoff et al.
patent: 4669071 (1987-05-01), Minami et al.
patent: 4837429 (1989-06-01), Umezawa et al.
Mintel William
Treacy David R.
U.S. Philips Corporation
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