Radiation-sensitive semiconductor body having an integrated...

Details Radiation-sensitive semiconductor body having an integrated... Radiation-sensitive semiconductor body having an integrated...

2006-07-11

2006-07-11

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S431000, C257S440000, C257S462000, C359S248000

Reexamination Certificate

active

07075124

ABSTRACT:
A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between λ1and λ2where λ2>λ1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below λ2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below λ1, and passes electromagnetic radiation at a wavelength above λ1.

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