Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...
Patent
1999-02-26
2000-06-27
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Diazo reproduction, process, composition, or product
Composition or product which contains radiation sensitive...
430165, 430193, 528148, 528153, G03F 7023
Patent
active
060805226
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
This invention relates to a radiation sensitive resist composition responding to radiation such as ultraviolet rays, deep ultraviolet rays, X-rays, electron beams, etc. and, more particularly, to a radiation sensitive resist composition capable of forming a highly heat-resistant resist pattern with high sensitivity and high resolution.
BACKGROUND ART
In manufacturing integrated circuits, color filters, liquid crystal display elements, etc., finely patterning technology has been required and, in order to satisfy the requirement, there have been used radiation sensitive resist compositions capable of forming a pattern with high resolution. Formation of such fine pattern using the radiation sensitive resist composition is conducted, for example, in the following manner. A radiation sensitive resist composition is coated on a substrate such as a silicon substrate by a well-known or known coating method such as a spin coating method, roller coating method or the like, prebaked to form a radiation sensitive resist layer on the substrate, then patternwise exposed through a mask using radiation such as ultraviolet rays, deep ultraviolet rays, X-rays, electron beams or the like or directly beam-exposed without using a mask to thereby form a patternwise latent image in the resist layer, followed by post baking for improving developability, etching resistance, etc. and subsequent development processing. The thus formed resist pattern is subjected to optional post steps such as a dry etching step, a diffusing step, etc. As the resist to be used in this finely patterning technology, there have been known various positive- or negative-working ones.
Typical examples of conventionally known positive- or negative-working resists are illustrated below. As the positive-working resists, there are illustrated resists comprising an alkali-soluble resin and a quinonediazide photo-sensitizer and chemically amplified resists and, as the negative-working resists, there are illustrated polyvinyl cinnamate, an aromatic azide compound, a resist comprising a cyclized rubber and a bisazide compound, a diazo resin, a photopolymerizable composition containing an addition polymerizable unsaturated compound, a chemically amplified negative-working resist comprising an alkali soluble resin, a cross-linking agent and an acid generator, and the like. For example, in the above-described positive-working resist comprising an alkali soluble resin and a quinonediazide photo-sensitizer, a novolak resin not containing low molecular weight portion is preferably used as the alkali soluble resin from the resolution point of view. The resist containing such novolak resin, however, has the defect of insufficient sensitivity. Therefore, it is popularly conducted to add a sensitizer to a resist composition to improve sensitivity. This sensitizer is generally a low molecular weight phenol compound, and does not contribute to increasing heat resistance of the resist due to its low molecular weight. Therefore, when the resist is subjected to a high temperature processing step such as a post exposure baking step (PEB) or a dry etching step at a temperature of about 120 to 140.degree. C., deformation of the resist pattern takes place or the pattern edge portion becomes round to form a semicylindrical shape due to its low heat resistance. This phenomenon such as pattern deformation is observed seriously in a pattern portion where a large area is left as such. The reason for deformation of pattern in the pattern portion where a large area is left as such is generally explained as follows. That is, when a resist is prebaked, a solvent in the resist is removed by the prebaking heat. However, since drying of the resist proceeds from the resist surface, the interior of the resist is liable to contain a larger amount of the residual solvent. Then, the prebaked resist is made selectively soluble in a developer by irradiation with radiation. A resist pattern having a small area comparatively difficultly suffers from deformation of pattern dimension s
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Derwent Abstract JP 9090624.
Ito Hiromi
Tanaka Hatsuyuki
Chu John S.
Clariant Internaitonal, Ltd.
Hanf Scott E.
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