Radiation sensitive device with lateral current

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

357 22, 307311, H01B 2714

Patent

active

042413583

ABSTRACT:
A radiation sensitive solid state device employing a lateral current and a method for shortening the turn-off time of a radiation sensitive device are disclosed. The device includes a semiconductor layer of one conductivity type and a radiation sensitive element present in the semiconductor layer. The semiconductor layer forms a low resistance lateral path beneath the radiation sensitive element. The method for shortening the turn-off time includes providing a substantially lateral flow of carriers characteristic of the one conductivity type through the semiconductor layer beneath the radiation sensitive element.

REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi
patent: 3887936 (1975-06-01), Shannon
patent: 3931633 (1976-01-01), Shannon
patent: 3986195 (1976-10-01), Arai

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