Radiation-sensitive device

Details Radiation-sensitive device Radiation-sensitive device

1989-05-15

1991-02-26

Jackson, Jr., Jerome

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 2312, 357 2314, 357 2315, 357 59, 25037007, H01L 2978, H01L 3110

Patent

active

049965760

ABSTRACT:
A p-channel depletion-mode MOS device is utilized for measuring low levels of ionizing radiation.

REFERENCES:
patent: 3673471 (1972-06-01), Klein et al.
patent: 3803461 (1974-04-01), Beneking
patent: 3882530 (1975-05-01), Danchenko
patent: 3886584 (1975-05-01), Cook et al.
patent: 4012762 (1977-03-01), Abe et al.
patent: 4163240 (1979-07-01), Swinehart et al.
patent: 4176372 (1979-11-01), Matsushita et al.
patent: 4213045 (1980-07-01), Fraass
patent: 4273805 (1981-06-01), Dawson et al.
patent: 4605946 (1986-08-01), Robinson, Jr.
Sze, Physics of Semiconductor Device, N.Y., 1981, pp. 453-456.

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