Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-07-25
1998-12-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257460, 257464, 257466, H01L 3100
Patent
active
058523227
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The invention relates to a radiation-sensitive detector element with an active area formed between two adjoining layer areas of a layer arrangement of different charge carriers, in which a conversion of incident electromagnetic radiation takes place. The invention further relates to a process for producing a radiation-sensitive detector element.
BACKGROUND OF THE INVENTION
Known radiation-sensitive detector elements, in particular photoelectric elements, are used for converting electromagnetic radiation signals into electrical signals. A multitude of possible uses exist for such detector elements. Employment in the scanning unit of photoelectrical position measuring systems should be mentioned in this connection, for example. In this case the detector elements provided are used for detecting the amplitude-modified radiation signals resulting from the relative displacement of a scale graduation and a scanning plate. A design of the greatest possible compactness is required, i.e. as a result, certain demands are made on the radiation-sensitive detector elements used. Furthermore, the simplest possible production of the components used, in particular, of the detector elements, is desirable.
The customary radiation-sensitive detector elements have an active area, in which layers with different charge carrier concentrations are arranged adjacent to each other, for example semiconductor layers with different doping. For example, these are pn-junctions, in which free charge carriers are created in a space charge region being formed by the incident electromagnetic radiation. Commercially available photoelectric elements on a silicon base consist of n-doped silicon, into whose surface a thin layer of p-doped silicon was diffused. In this case the active area mentioned, in which a charge separation takes place upon the incidence of light, lies just below the radiation-sensitive surface. Contact elements or contact electrodes disposed on the detector element are necessary for transmitting the electrical signals generated in this way to an evaluation circuit.
Radiation-sensitive detector elements in the scanning unit designed in this way can now be integrated in a printed circuit board, for example, on which parts of the downstream evaluation electronics can also be additionally arranged. Thus the design of the detector elements as so-called SMD elements (surface mounted devices) offers itself. These are understood to be miniaturized components which can be mounted directly on the surface of printed circuit boards or other substrates. However, certain demands are made, in particular in connection with providing contacts, on such a design of the radiation-sensitive detector elements. It has been shown to be advantageous in this case if the detector elements are provided with suitable contacts on the side disposed opposite to the radiation-sensitive surface.
Such connections on the rear in connection with solar cells are basically known from U.S. Pat. No. 4,897,123 and EP 0 452 588. In U.S. Pat. No. 4,897,123 it is suggested in connection with this to lead one of the two contacts via a clamp-like connection from the radiation-sensitive surface in the direction toward the opposite surface, i.e. the rear. The second contact is already located on this opposite surface, so that the provision of contacts from the rear of the component is possible, The technical manufacturing outlay for forming the clamp-like connections between the front and rear of the component in particular has been shown to be disadvantageous.
It is known from EP 0 452 588, to allow the provision of contacts in the rear by means of appropriately sized openings through the active area, i.e. to provide the contacts on the side opposite from the radiation-sensitive side. In connection with the provision of contacts of this type, the crystalline structure of the various semiconductor layers is undesirably affected or interrupted because of the provided openings.
Photoelectric elements and IR detector elements with contact electrode
REFERENCES:
patent: 3802924 (1974-04-01), Pschunder
patent: 3870887 (1975-03-01), Deuker et al.
patent: 3959037 (1976-05-01), Gutierrez
patent: 3972750 (1976-08-01), Gutierrez et al.
patent: 4838952 (1989-06-01), Dill et al.
patent: 4857980 (1989-08-01), Hoeberechts
patent: 4897123 (1990-01-01), Mitsui
patent: 5100480 (1992-03-01), Hayafuji
patent: 5397400 (1995-03-01), Matsuno et al.
Patent Abstracts of Japan vol. 7, No. 204, Sep. 9, 1983, p. 61.
Dr. Johannes Heidenhain GmbH
Mintel William
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