Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1991-10-01
1994-06-14
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 31, 257 35, 505805, 505806, 505817, 505848, 505873, 505922, 2503362, H01L 3922, H01L 3912, G01K 700
Patent
active
053212762
ABSTRACT:
A superconducting tunnel junction radiation sensing device includes first and second superconductor electrodes and a tunnel barrier layer interposed therebetween. The tunnel barrier layer is made up of a thin-wall portion and a thick-wall portion each formed of a semiconductor or an insulator, and each having opposite surfaces respectively contacting the first and second superconductor electrodes, and each extending adjacent each other in a same horizontal plane between the first and second electrodes. The thick-wall portion has a vertical thickness which is at least twice that of the thin-wall portion. Furthermore, the thickness of the thin-wall portion is such that a tunnel effect is enabled therethrough form the first electrode to the second electrode, and the thickness of the thick-wall portion is such that a tunnel effect is substantially prohibited therethrough from the first electrode to the second electrode. The thin-wall portion along the same horizontal plane is substantially evenly distributed in a cross-sectional pattern within the tunnel barrier layer, the cross-sectional pattern being either an intermittent pattern or a continuous pattern. Furthermore, the cross-sectional area along the same horizontal plane of the thin-wall portion is less than that of the thick-wall portion.
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Kaminaga Takeshi
Kurakado Masahiko
Matsumura Atsuki
Takahashi Tooru
Larkins William D.
Nippon Steel Corporation
Tang Alice W.
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