Radiation responsive current generating cell and method of formi

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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29572, 136 89SJ, 357 30, 357 52, H01l 3106

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active

041440943

ABSTRACT:
A semiconductor cell for generating current in response to incident radiation, particularly solar energy, wherein a layer of material having charges is disposed over the PN current generating junction. The layer having charges possesses a net bound charge of the same polarity as the minority carriers associated with the underlying semiconductor material for aiding minority carrier flow across the PN junction and for minimizing recombination of those minority carriers at the surface of the semiconductor body.

REFERENCES:
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patent: 3620829 (1971-11-01), Beck
patent: 3769558 (1973-10-01), Lindmayer
patent: 3928073 (1975-12-01), Besson et al.
B. E. Deal "The Current Understanding of Charges in the Themally Oxidized Silicon Structure," J. Electrochem. Soc. vol. 121, pp. 198c-205c.
A.J. Diefenderfer, "Principles of Electronic Instrumentation" W. B. Saunders Co., Phila. Pa. (1972), pp. 144-145.
K. V. Vaidyanathan et al. "The Effect of Be.sup.+ Ion Implanted Exponetial & Uniform Impurity Profiles on the Electrical Characteristics of GaAs Solar Cells, " Conf. Record, 10th IEEE Photo-Specialists Conf. Nov. 1973, pp. 31-33.

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