Radiation resistant passivation of silicon solar cells

Details Radiation resistant passivation of silicon solar cells Radiation resistant passivation of silicon solar cells

1990-02-12

1991-07-09

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136261, 437 2, 437980, 357 30, 357 54, H01L 3106

Patent

active

050302957

ABSTRACT:
The interface of a silicon oxide passivation layer and a silicon substrate in a silicon solar cell is stabilized by covering the silicon oxide passivation layer with a layer of undoped or phosphorus doped polycrystalline silicon. A second layer of silicon oxide is formed by deposition on the surface of the phosphorus doped polycrystalline and enhances the anti-reflection characteristics of the composite structure.

REFERENCES:
patent: 4198246 (1980-04-01), Wu
patent: 4234352 (1980-11-01), Swanson
patent: 4375125 (1983-03-01), Byatt
patent: 4642414 (1987-02-01), Rasch et al.
patent: 4778776 (1988-10-01), Tong et al.
Y. Kwark et al., Conference Record, 18th IEEE Photovoltaic Specialists Conf., (1985), pp. 787-791.
F. A. Lindholm, ibid, pp. 1003-1007.

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