1989-06-27
1990-09-11
Carroll, J.
357 36, 357 49, 357 59, 357 67, 357 72, 357 88, 357 92, H01L 2972, H01L 2712, H01L 2904, H01L 2348
Patent
active
049566881
ABSTRACT:
A bipolar memory of a construction having high immunity from soft error attributable to alpha rays is provided. The transistors of a flip flop, i.e., the essential circuit of the memory cell, are inverted, and the load device thereof has a shielding arrangement for shielding the flip flop from the noise produced within the substrate. Either pnp type transistors or Schottky barrier diodes are employed as the load devices. A buried layer (ordinarily, an n type layer) and a doped layer of the reverse conductivity type (ordinarily the p type) are formed in the region where the device is provided. A reverse bias is applied across the buried layer and the doped layer to shut off the noise produced within the substrate.
REFERENCES:
patent: 4076556 (1978-02-01), Agraz-Guerena et al.
patent: 4130826 (1978-12-01), Bachle et al.
patent: 4388636 (1983-06-01), Lohstroh
patent: 4400712 (1983-08-01), O'Connor
patent: 4425574 (1984-01-01), Silvestri et al.
patent: 4433470 (1984-02-01), Kameyama et al.
patent: 4480319 (1984-10-01), Hotta et al.
patent: 4488350 (1984-12-01), Vora et al.
patent: 4543595 (1985-09-01), Vora
T. Nakamura et al., "Self-Aligned Transistor with Sidewall Base Electrode", IEEE Transactions on Electron Devices, Vol. ED-29, (Apr. 1982), pp. 596-600.
H. Sakurai et al., "A New Transistor Structure for High Speed Bipolar LSI", Japanese Journal of Applied Physics, vol. 19 (1980), Supplement 19-1, pp. 181-185.
D. D. Tang et al., "Asymmetrical Bipolar Structure", IEEE Electron Devices Meeting; (Dec. 1980), pp. 58-60.
Hayashida Tetsuya
Honma Noriyuki
Kubo Masaharu
Matsumoto Motoaki
Nakamura Tohru
Carroll J.
Hitachi , Ltd.
LandOfFree
Radiation resistant bipolar memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation resistant bipolar memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation resistant bipolar memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1187743