Radiation or light detecting semiconductor element containing he

Fishing – trapping – and vermin destroying

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357 30, 357 52, H01L 3118

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049604368

ABSTRACT:
A radiation or light detecting semiconductor element comprises a p-type monocrystalline silicon substrate having a high specific resistance of about 10,000 ohm-cm, a stopper layer formed in a part of a first principal surface of the substrate and diffused to provide a p-type conductivity material, an electrode diffusion layer of p.sup.+ type material formed in at least part of the remaining part of the first principal surface not provided with the stopper layer, so as to be diffused into an n-type conductivity material, a metal (silicon) oxide layer formed on substantially the entire first principal substrate surface, a first aluminum electrode provided through the metal oxide layer and electrically connected to the electrode diffusion layer, and a second electrode of laminated Cr-Ni-Au deposited electrically conductively on a second principal surface of the substrate. A method for producing the element is also disclosed.

REFERENCES:
patent: 3472711 (1969-10-01), Chow
patent: 3601668 (1971-08-01), Slater
patent: 4090213 (1978-05-01), Maserjian et al.
patent: 4343962 (1982-08-01), Neugroschel et al.
patent: 4524386 (1985-06-01), Cornick

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