Radiation-induced substrate photo-current compensation apparatus

Details Radiation-induced substrate photo-current compensation apparatus Radiation-induced substrate photo-current compensation apparatus

1988-03-21

1989-10-24

Edlow, Martin H.

357 4, H01L 2978

Patent

active

048765830

ABSTRACT:
A radiation-induced substrate photo-current compensation apparatus for a silicon FET on a sapphire substrate having an additional pair of electrodes on the substrate in a precise geometrical relationship to the source and drain electrodes to provide a compensating substrate current which flows into the source and drain electrodes, eliminating the undesirable effects of radiation on the semiconductor.

REFERENCES:
patent: 4368085 (1983-01-01), Peel
patent: 4489339 (1984-12-01), Uchida
patent: 4520382 (1985-05-01), Shimura
patent: 4748485 (1988-05-01), Vasudev
patent: 4751554 (1988-06-01), Schnable
patent: 4761679 (1988-08-01), Stupp
patent: 4766482 (1988-08-01), Smeltzer

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