Radiation induced deposition of metal on semiconductor surfaces

Coating processes – Electrical product produced – Welding electrode

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427 88, 427 92, B05D 118, B05D 306

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043594859

ABSTRACT:
A metal layer is formed on a surface of a Group III-V compound semiconductor by placing the surface in contact with a metal-containing solution and directing laser radiation through the solution. The radiation has a wavelength which is absorbed in the surface, thereby thermally inducing a chemical reaction between the surface and the solution and causing metal from the solution to be deposited on the surface. Specific examples of the deposition of Pt, Au and Zn on InP and GaAs are described.

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