Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-11-10
1995-03-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257291, 257292, 257443, H01L 2714
Patent
active
053998847
ABSTRACT:
A radiation imager includes a photosensor array having a plurality of individually addressable pixels, each pixel having a photosensor island and an associated thin film transistor (TFT) disposed to selectively electrically couple the photosensor island to a predetermined address line. In each pixel a single common passivation layer is disposed over the TFT and the photosensor island such that the passivation layer is adjacent to both the outer surfaces of the TFT and portions of the photosensor island. In a method of fabricating a photosensor array as described above, after depositon of a source-drain metal layer, the layer is left unpatterned until after the photosensor island has been formed. In the formation of the photosensor island the source-drain metal layer serves as an etch stop to protect the TFT. Following formation of the photosensor island, the source-drain metal layer is patterned to form source and drain electrodes and fabrication of the TFT is completed. The single common passivation layer is then deposited over both the TFT and the photosensor island.
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Giambattista Brian W.
Kwasnick Robert F.
Wei Ching-Yeu
General Electric Company
Ingraham Donald S.
Mintel William
Snyder Marvin
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