Radiation imager with discontinuous dielectric

Details Radiation imager with discontinuous dielectric Radiation imager with discontinuous dielectric

1996-12-23

1998-07-07

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257291, 257443, 257446, H01L 27148, H01L 3100

Patent

active

057773556

ABSTRACT:
A radiation imager having a plurality of photosensitive elements has a two-tier passivation layer disposed between the top patterned common electrode contact layer and respective photosensor islands. The top passivation layer is a polymer bridge member disposed between adjacent photodiodes so as to isolate defects such as moisture-induced leakage in any bridge island layer to the two adjacent photodiodes spanned by the bridge island.

REFERENCES:
patent: 5233181 (1993-08-01), Kwasnick et al.
patent: 5631473 (1997-05-01), Possin et al.
patent: 5648654 (1997-07-01), Possin
"Two Dimentionsal Amosphous Silicon Imager Sensor Arrays", R. A. Street et al., Amorphous Silicon Technology--1995, Materials Research Society Symposium Proceedings vol. 377, pp. 757-766, Apr. 1995.

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