Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-06-17
1995-07-25
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257292, 257446, 257448, H01L 2714, H01L 3100
Patent
active
054356083
ABSTRACT:
A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.
REFERENCES:
patent: 4719498 (1988-01-01), Wada et al.
patent: 5075244 (1991-12-01), Sakai et al.
patent: 5233181 (1993-08-01), Kwansnick et al.
patent: 5294811 (1994-03-01), Aoyama et al.
Kang-Chen Lin et al., "The Hydrogenated Amorphous Silicon Active Hollow Four Quadrant Orientation Detector for Application to Neural Network Image Sensors," IEEE Transactions on Electron Devices, vol. 41, No. 5, May 1994, pp. 666-670.
Giambattista Brian W.
Kwasnick Robert F.
Salisbury Roger S.
Wei Ching-Yeu
General Electric Company
Ingraham Donald S.
Mintel William
Snyder Marvin
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