Radiation image detector with optical gain selenium photosensors

Details Radiation image detector with optical gain selenium photosensors Radiation image detector with optical gain selenium photosensors

1992-01-23

1993-03-30

Fields, Carolyn E.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

25037009, G01T 124, G01T 120

Patent

active

051986736

ABSTRACT:
A large area radiation imager having a scintillator, an amorphous selenium photosensor, and a non-linear high voltage protective device employs a selected biasing voltage between about 100 volts and 1000 volts at the selenium photosensor to cause the photosensor to exhibit avalanche multiplication. The photosensor has an area not less than about 100 square centimeters. The amorphous selenium is doped slightly with arsenic or arsenic and tellurium. The device is advantageously coupled to a data read and reset circuit to selectively read charge generated in pixels of the photosensor. The read and data circuit is protected from an overvoltage condition by the non linear high voltage protective device, such as a protective thin film transistor or a two terminal protective device. The protective TFT is structured to have a relatively thick gate dielectric layer, which thickness is selected to cause the protective TFT to have a threshold voltage corresponding to a desired protective voltage.

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Entine et al., "Scintillation Detectors Using Large Area Silicon Avalanche Photodiodes", IEEE Trans. Nucl. Sci., NS-30, (1), Feb. 1983, pp. 431-435.
Petrillo et al., "Scintillation Detection with Large-Area Reach-Through Avalanche Photodiodes", IEEE Trans. Nucl. Sci., NS-31 (1), Feb. 1984, pp. 417-423.
"Avalanche Multiplication in Amorphous Selenium" by K. Tsuji et al., Central Research Lab., Hitachi, Ltd. Kokubunji, Tokyo 185, Japan, 19th Conference on Solid State Devices and Materials, Aug. 25-27, 1987, Tokyo Japan.

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