Radiation image detector

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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Details

C250S370090

Reexamination Certificate

active

07608833

ABSTRACT:
A voltage applying electrode, to which a voltage is to be applied, a semiconductor layer, which is capable of generating electric charges when radiation is irradiated to the semiconductor layer, and an electrode for detecting an electric signal in accordance with a radiation dose are overlaid one upon another. A hole injection blocking layer is located between the voltage applying electrode and the semiconductor layer. The hole injection blocking layer contains an alloy of SbxS100-x, where x represents a number satisfying the condition of 41≦x≦60.

REFERENCES:
patent: 6642534 (2003-11-01), Shima et al.
patent: 2004/0094721 (2004-05-01), Tokuda et al.
patent: 2006/0065880 (2006-03-01), Tanaka et al.
patent: 2007/0125953 (2007-06-01), Miyake et al.
patent: 2001-177140 (2001-06-01), None

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