Radiation image detector

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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Reexamination Certificate

active

07728300

ABSTRACT:
In a radiation image detector including a voltage-applied electrode, to which a voltage is applied, and a semiconductor layer for generating charges by irradiation with radiation, which are superposed one on the other, a charge injection prevention layer that covers at least the edge of the voltage-applied electrode is provided. Further, a protruding electrode is provided on the upper surface of the charge injection prevention layer in such a manner that the side surface of an edge of the protruding electrode is located on the outer side of the side surface of the edge of the voltage-applied electrode and the side surface of the other edge of the protruding electrode is located at the position of the side surface of the edge of the voltage-applied electrode or on the inner side thereof.

REFERENCES:
patent: 5178980 (1993-01-01), Mort et al.
patent: 6075248 (2000-06-01), Jeromin et al.
patent: 6363135 (2002-03-01), Brauers et al.
patent: 6885005 (2005-04-01), Sato et al.
patent: 2007/0145313 (2007-06-01), Imai
patent: 2009/0084966 (2009-04-01), Irisawa et al.

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