Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2008-05-01
2010-11-16
Porta, David P (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C250S370080, C250S370090, C250S370110, C257S053000, C257S428000, C257S429000, C257S444000
Reexamination Certificate
active
07834324
ABSTRACT:
An intermediate layer is located between a recording photoconductive layer and an electrode, which is either one of a bias electrode and a reference electrode, and which is located on the side at positive electric potential with respect to a charge accumulating section at the time of readout of electric charges of the charge accumulating section. The intermediate layer is an a-Se layer containing, as a specific substance, at least one kind of substance selected from the group consisting of an alkali metal fluoride, an alkaline earth metal fluoride, an alkali metal oxide, an alkaline earth metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5≦x≦1.5, in a concentration falling within the range of 0.003 mol % to 0.03 mol %.
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Bryant Casey
Fujifilm Corporation
Porta David P
Sughrue & Mion, PLLC
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