Radiation heated reactor for chemical vapor deposition on substr

Details Radiation heated reactor for chemical vapor deposition on substr Radiation heated reactor for chemical vapor deposition on substr

1980-01-31

1981-04-28

Kaplan, Morris

Coating apparatus

Gas or vapor deposition

Having means to expose a portion of a substrate to coating...

118725, 118730, C23C 1308

Patent

active

042638720

ABSTRACT:
A slitted tubular member within a reaction chamber encloses a stack of spaced substrates on the surfaces of which are deposited material by chemical vapor-deposition. The tubular member is formed of susceptor material adapted for heating by RF energy or by electrically heated wire. Oscillating means disposed in the slit direct a gas flow into the spacings between the substrates, the stack of which is spaced from the tubular member. Oscillating means disposed in the slit direct a gas flow into the spacings between the substrates, the stack of which is spaced from the tubular member.

REFERENCES:
patent: 2936246 (1960-05-01), Coghill
patent: 3226254 (1965-12-01), Reuschel
patent: 3330251 (1967-07-01), Gutsche
patent: 3460510 (1969-08-01), Currin
patent: 3645230 (1972-02-01), Hugle et al.
patent: 3922467 (1975-11-01), Pinchon
patent: 3934060 (1976-01-01), Burt et al.
patent: 4062318 (1977-12-01), Ban et al.
patent: 4096822 (1978-06-01), Yamawaki et al.
patent: 4098223 (1978-07-01), Ertl et al.
patent: 4108106 (1978-08-01), Dozier

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