Radiation hardness testing for field effect devices

Details Radiation hardness testing for field effect devices Radiation hardness testing for field effect devices

1978-03-22

1980-09-02

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158D, G01R 3122

Patent

active

042209188

ABSTRACT:
A method of testing a field effect device for radiation hardness. The method comprises the steps of subjecting the field effect device to a low temperature environment, developing a first set of data points by measuring the conductance of the field effect device as a function of gate voltage at a first substrate bias, developing a second set of data points by measuring the conductance of the field effect device as a function of gate voltage at a second substrate bias, which is different from the first substrate bias, and comparing the first and second sets of data points to obtain an assessment of radiation hardness.

REFERENCES:
patent: 4114096 (1978-09-01), Chinery
Long, D. M., "Transient Radiation Response . . . ", IEEE Trans. on Nuclear Science, vol. NS-21, Dec. 1974, pp. 119-123.
Johnson et al, "Terminal Measurements for Hardness . . . ", IEEE Trans. on Nuclear Science, vol. NS-22, Dec. 1975, pp. 2303-2307.

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