Radiation hardening of MISFET devices

Details Radiation hardening of MISFET devices Radiation hardening of MISFET devices

1983-02-24

1989-07-04

Tarcza, Thomas H.

357 52, 357 61, H01L 2978, H01L 2934

Patent

active

H00006556

ABSTRACT:
A MISFET device which typically utilizes silicon dioxide as an insulating material and which becomes inoperative under ionizing radiation conditions can be made to significantly enhance its radiation survivability by introducing crystalline zinc sulfide as an insulating material. The invention may be manufactured as one of three variations. Crystalline zinc sulfide may replace silicon dioxide as the gate insulator, the field insulator, or both the gate and field insulators.

REFERENCES:
patent: 3258663 (1966-06-01), Weimer
patent: 3287506 (1966-11-01), Hoehnlein
patent: 3556966 (1971-01-01), Waxman et al.
patent: 3585415 (1971-06-01), Muller et al.
patent: 3799813 (1974-03-01), Danchenko
patent: 4047214 (1977-09-01), Francombe et al.
patent: 4238758 (1980-12-01), Suzuki

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