Radiation hardened visible P-I-N detector

Details Radiation hardened visible P-I-N detector Radiation hardened visible P-I-N detector

2005-08-09

2005-08-09

Le, Que T. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140LA

Reexamination Certificate

active

06927383

ABSTRACT:
Disclosed is a method for producing an array (20) of p-intrinsic-n light detectors, as is an array produced in accordance with the method. The method includes providing a wafer (1); forming a first layer (2) having a first type of electrical conductivity (e.g., n-type) over a surface of the wafer; forming a second layer (3) that is an intrinsic layer on the first layer and, for each light detector, implanting or diffusing a region (9A) into a surface of the second layer that is opposite the surface on the first layer, the region (9A) having a second type of electrical conductivity (e.g., p-type). The method further includes forming an opening or aperture, referred to herein as a V-groove (6), through the second layer at least to the first layer; and electrically contacting with a first electrical contact (15, 9B,13B) the first layer through the V-groove. The method further electrically contacts each of the regions with an associated one of a second electrical contact (13A), where the first and second electrical contacts are located on a same, non-radiation receiving surface of the array. In a preferred embodiment the steps of electrically contacting each comprise forming an Indium bump, and further comprise hybridizing the array with a readout integrated circuit (30). In the preferred embodiment forming the first layer over the surface of the wafer includes growing a doped epitaxial layer over the surface of the wafer, or it may include implanting the first layer into the surface of the wafer. Forming the second layer on the first layer includes growing an intrinsic epitaxial layer on the first layer to a thickness of, for example 10 microns. The wafer is thinned, either mechanically, or chemically, or by both processes.

REFERENCES:
patent: 5600130 (1997-02-01), VanZeghbroeck
patent: 5670817 (1997-09-01), Robinson
patent: 5798558 (1998-08-01), Tyson et al.
patent: 5923071 (1999-07-01), Saito
patent: 2003/0075683 (2003-04-01), Fujita et al.

Affiliated with

Also associated with

Rating

Radiation hardened visible P-I-N detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radiation hardened visible P-I-N detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation hardened visible P-I-N detector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3457468