Radiation-hardened transistor fabricated by modified CMOS...

Details Radiation-hardened transistor fabricated by modified CMOS... Radiation-hardened transistor fabricated by modified CMOS...

2005-01-25

2005-01-25

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S219000, C257S354000

Reexamination Certificate

active

06847065

ABSTRACT:
An NMOS field effect transistor (1) is made radiation hard by a pair of guard band implants (115) of limited horizontal extent, extending between the source (30A) and drain (30B) along the edge of the transistor body, and extending only to a limited extent into the field insulator and into the interior of the transistor, leaving an unimplanted area in the center of the body that retains the transistor design threshold voltage.

REFERENCES:
patent: 5619053 (1997-04-01), Iwamatsu et al.
patent: 6184556 (2001-02-01), Yamazaki et al.
patent: 6583474 (2003-06-01), Yamazaki et al.
patent: 6621116 (2003-09-01), Church

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