Radiation-hardened transistor amplifiers

Details Radiation-hardened transistor amplifiers Radiation-hardened transistor amplifiers

1978-02-17

1979-04-24

Dahl, Lawrence J.

Amplifiers

With semiconductor amplifying device

Including atomic particle or radiant energy impinging on a...

307308, 330261, 330296, H03F 308

Patent

active

041514840

ABSTRACT:
An amplifier transistor has its base-to-collector voltage maintained substantially zero, and its collector-base junction has in inverse-parallel connection therewith an auxiliary semiconductor junction exposed to the same transient ionizing radiation environment. Photo-currents generated in the collector-base junction of the amplifier transistor responsive to transient ionizing radiation are counteracted by the photo-currents concurrently generated in the auxiliary semiconductor junction, so amplification can continue without being unduly hampered by such radiation.

REFERENCES:
patent: 3743955 (1973-07-01), Stehlin

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