Radiation-hardened transistor amplifiers

Details Radiation-hardened transistor amplifiers Radiation-hardened transistor amplifiers

1978-02-17

1979-04-24

Dahl, Lawrence J.

Amplifiers

With semiconductor amplifying device

Including atomic particle or radiant energy impinging on a...

307308, 330261, 330296, H03F 308

Patent

active

041514831

ABSTRACT:
The transient photo-currents generated in the collector-base junction of an amplifier transistor responsive to transient ionizing radiation are counteracted by those similarly generated in an auxiliary p-n semiconductor junction in inverse-parallel connection with the emitter base junction of the amplifier transistor. To provide more perfect counteraction of these photo-currents, this auxiliary semiconductor junction, operated in reverse-bias, is matched in characteristics with the collector-base junction of the amplifier transistor, and the base-to-collector potential of the amplifier transistor is arranged to be substantially the same as the reverse-bias potential across the auxiliary semiconductor junction.

REFERENCES:
patent: 3743955 (1973-07-01), Stehlin

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