Radiation hardened semiconductor devices

Details Radiation hardened semiconductor devices Radiation hardened semiconductor devices

1987-03-02

1989-04-25

James, Andrew J.

357 54, 357 2311, H01L 2940

Patent

active

048252786

ABSTRACT:
Disclosed are semiconductor devices and circuits which are highly resistant to the effects of radiation. A thin conductive layer, which is biased at substrate potential, and a thin oxide are provided under the usual field oxide of the devices. The conductive layer shields the semiconductor substrate from the effects of charge generation in the field oxide due to radiation absorption.

REFERENCES:
patent: 3602782 (1971-08-01), Klein
patent: 3841926 (1974-10-01), Garnache
patent: 4333225 (1982-10-01), Yeh
patent: 4661202 (1987-04-01), Ochii
IBM Technical Disclosure Bulletin, vol. 16, #3, pp. 702-703, by Shepard, Aug. 1973.
IEEE Transactions on Electron Devices vol. 19, #11 pp. 1199-1206, Nov. 1972, by Lin.
IBM Technical Disclosure Bulletin, vol. 57, No. 10A, pp. 5701-5702, Mar. 1985.

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