Radiation hardened MOS voltage generator circuit

Details Radiation hardened MOS voltage generator circuit Radiation hardened MOS voltage generator circuit

1979-06-21

1982-04-06

Beha, Jr., William H.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

307297, 307304, G05F 304

Patent

active

043238467

ABSTRACT:
A voltage generator circuit for producing an output voltage which tracks the threshold voltage variation of the MOS devices on the semiconductor body, the magnitude of the output voltage being equal to or slightly greater than the absolute magnitude of the threshold voltages. The circuit includes two MOSFETs having their conduction paths connected in electrical series, each MOSFET having an applied gate-to-source voltage of 2V.sub.T. The voltage output terminal is connected to the node between the series connected conduction path terminals of the first and second MOSFETs. Three series connected MOSFETs which form a source follower circuit are also provided for providing the required gate-to-source voltage on the first two MOSFETs.

REFERENCES:
patent: 3436621 (1969-04-01), Crawford
patent: 3675143 (1972-07-01), Greene
patent: 3823332 (1974-07-01), Feryszka et al.
patent: 3913026 (1975-10-01), Koehler
patent: 3936676 (1976-02-01), Fujita
patent: 4205263 (1980-05-01), Kawagai et al.
Thin Film Solids, No. 1, pp. 21-25, (Nov. 1972), S3005 0023.
IBM Technical Disclosure Bulletin, vol. 11, No. 4, p. 396, Sep. 1968.

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