Radiation hardened dielectric for EEPROM

Details Radiation hardened dielectric for EEPROM Radiation hardened dielectric for EEPROM

1996-06-20

1998-09-15

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257410, 257650, H01L 29792

Patent

active

058083537

ABSTRACT:
A EEPROM 140 has a storage transistor 160 with a gate insulating layer 104 of BPSG and a polysilicon gate 112.2 of the same layer as the polysilicon gate 112.1 of the FET transistor 150. The BPSG layer 104 has POHC traps that capture holes injected into N well 103.2. A positive voltage applied to N well 103.2 programs the storage transistor 160 off. Applying a positive voltage to the gate 112.2 neutralizes the holes stored in layer 104 and erases the memory of transistor 160.

REFERENCES:
patent: 3881180 (1975-04-01), Gosney, Jr.
patent: 4782037 (1988-11-01), Tomozawa et al.
patent: 5159431 (1992-10-01), Yoshikawa
patent: 5235202 (1993-08-01), Yee et al.
patent: 5241208 (1993-08-01), Taguchi
patent: 5329486 (1994-07-01), Lage
R. S. Muller and T. I. Kamins, Device Electronics For Integrated Circuits, John Wiley & Sons, Inc., pp. 372-376, 1977. no month.

Affiliated with

Also associated with

Rating

Radiation hardened dielectric for EEPROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radiation hardened dielectric for EEPROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation hardened dielectric for EEPROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-91412