Radiation hardened complementary transistor integrated circuits

Details Radiation hardened complementary transistor integrated circuits Radiation hardened complementary transistor integrated circuits

1988-06-21

1990-02-20

James, Andrew J.

Fishing, trapping, and vermin destroying

357 55, 357 42, 357 50, 437 62, 437 63, 437 70, H01L 2176

Patent

active

049031082

ABSTRACT:
Integrated circuits with vertical isolated trenches are radiation hardened by providing vertical gate segments, preferably, of doped polycrystalline silicon, in the trenches and connected at the bottom of the trenches to a region of the same conductivity type. The surface devices may be complementary and the vertical gates may also be complementarily doped. A method of fabrication is described for a single crystal wafer, as well as SOI.

REFERENCES:
patent: 4786960 (1988-11-01), Jeuch
"Characterization of the Lateral and Vertical Parasitic Transistors in a Trench Isolated CMOS Process", M. C. Roberts et al., pp. 411-412.
"Mosfet Achieved by a Combination of Polysilicon Sidewall and Simox Technology", T. Ohno et al., Electronic Letters, pp. 559-560, May 1986.

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