Radiation hardened charge coupled device

Details Radiation hardened charge coupled device Radiation hardened charge coupled device

1995-07-17

1999-05-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257216, 257228, 257250, H01L 27148, H01L 29768

Patent

active

059006544

ABSTRACT:
A structure and method is described for fabricating a nuclear radiation induced damage resistant P-type buried channel charge-coupled device (P-BCD) which converts an optical image focused thereon into a time varying electrical signal. The invention uses a differentially related high level dosing of dopant in the buried channel accompanied by processing at minimum effective temperatures, thereby enhancing device tolerance to exposure to nuclear radiation induced displacement and ionization damage which otherwise would degrade the imaging performance of the device.

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M. S. Saks et al; IEEE Transactions on Nuclear Science, NS-26; 12-1997; pp. 5074-5079.
Sarnoff Res. Ctr., "High Resolution UV CCE"Aug.-1992; pp. 0-46.

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