Radiation hard MOS devices and methods for the manufacture there

Details Radiation hard MOS devices and methods for the manufacture there Radiation hard MOS devices and methods for the manufacture there

1982-12-20

1986-05-27

Edlow, Martin H.

357 239, 357 50, H01L 2978

Patent

active

045918902

ABSTRACT:
Radiation hard, N-channel MOS devices comprising active regions surrounded by field oxide protected by an underlying region of heavily doped p-type material. The guard region is doped heavily enough to provide field inversion voltages in the range of 50 V to 60 V prior to irradiation. The guard region is separated from the source and drain regions to provide acceptably high breakdown voltages. The devices are produced with minor variations to well known, high density local oxidation of silicon-type processes.

REFERENCES:
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3783047 (1974-01-01), Paffen et al.
patent: 4370669 (1983-01-01), Donley
patent: 4404579 (1983-09-01), Leuschner
"An Advanced, Radiation Hardened Bulk CMOS/LSI Technology", I.E.E.E. Transactions on Nuclear Science; vol. NS-28; No. 6; Dec. 81; Schroeder, et al, pp. 4033-4037.

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