Radiation hard memory cell structure with drain shielding

Details Radiation hard memory cell structure with drain shielding Radiation hard memory cell structure with drain shielding

1986-09-05

1991-01-29

Hille, Rolf

357 237, 357 2313, 357 2314, 357 59, 357 56, 357 42, H01L 2702, H01L 2904, H01L 2906, H01L 2701

Patent

active

049890611

ABSTRACT:
A memory cell structure has a pair of cross-coupled inverters, each inverter having first and second MOS series coupled transistors. Each of the second inverter transistors has a source disposed near the periphery of the cell, a drain disposed closer to the center of the cell than the source thereof, and a channel region disposed between the source and drain. The channel region shields the sensitive drain from radiation generated photocurrents, thereby minimizing the chance of a change in logic state during radiation.

REFERENCES:
patent: 3414781 (1968-12-01), Dill
patent: 3700976 (1972-10-01), Dill
patent: 4158239 (1979-06-01), Gertin
patent: 4242156 (1980-12-01), Peel
patent: 4377819 (1983-03-01), Sakai et al.
patent: 4447823 (1984-05-01), Maeguchi et al.
patent: 4523963 (1985-06-01), Ohta et al.
patent: 4535426 (1985-08-01), Ariizumi et al.
patent: 4558340 (1985-12-01), Schachter et al.
Herbert et al. "SOS Test Structures for Measurement of Photocurrent Sources and Upset Dose Rates in Memories",DNA/Aerospace Corp. Workshop on Test Structures for Radiation Hardening and Hardness Assurance, Feb. 19, 1986.

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