Radiation-hard isoplanar cryo-CMOS process suitable for sub-micr

Details Radiation-hard isoplanar cryo-CMOS process suitable for sub-micr Radiation-hard isoplanar cryo-CMOS process suitable for sub-micr

1996-05-20

1999-03-09

Niebling, John

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 53, 437 58, H01L 2700

Patent

active

058799540

ABSTRACT:
A radiation-hard isoplanar cryo-CMOS process suitable for submicron device fabrication reduces channel length to submicron levels. A channel stop (52) is formed after a first polysilicon gate (50) is formed to reduce the space between a n-
+ source/drain region (67, 68) and the channel-stop region (52). Double gate oxidation steps are performed to increase polyoxide thickness. A thermal oxide masking step is carried out to obtain a thin layer of gate oxide under a second polysilicon gate (60A) for CMOS devices. The process includes two different second polysilicon masking steps to provide dimension control of second polysilicon gates (60A) and to remove bridging of the second polysilicon where the second polysilicon layer (58) is over the first polysilicon layer (48).

REFERENCES:
patent: 4599789 (1986-07-01), Gasner
patent: 4902639 (1990-02-01), Ford
patent: 5028556 (1991-07-01), Chang
patent: 5342802 (1994-08-01), Kubokoya et al.
patent: 5355011 (1994-10-01), Takata
patent: 5464784 (1995-11-01), Crisenza et al.
patent: 5489545 (1996-02-01), Taguchi
patent: 5506161 (1996-04-01), Orlowski et al.
patent: 5521106 (1996-05-01), Okabe
Stanly Wolf, "Silicon Processing for The VLSI Era", vol. 3, 1995.

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