Radiation hard GaAs high electron mobility transistor

Details Radiation hard GaAs high electron mobility transistor Radiation hard GaAs high electron mobility transistor

1990-01-02

1991-07-02

James, Andrew J.

357 22, 357 58, H01L 29161

Patent

active

050289683

ABSTRACT:
The incorporation of a GaAs layer that is intentionally p-doped into a standard HEMT device structure has been shown to produce a HEMT transistor with greatly enhanced radiation hardness under exposure to neutron radiation.

REFERENCES:
patent: 4908325 (1990-03-01), Berenz

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