Radiation hard CMOS circuits in silicon-on-insulator films

Details Radiation hard CMOS circuits in silicon-on-insulator films Radiation hard CMOS circuits in silicon-on-insulator films

1990-12-13

1992-04-07

Prenty, Mark

357 2312, 357 2314, 357 29, 357 42, H01L 2701, H01L 2978, H01L 2702, G01T 124

Patent

active

051032775

ABSTRACT:
Means for compensating for threshold voltage shifts of Metal Oxide Semiconductor Field Effect Transistors (MOS FETs) of a Large Scale Integrated Circuit device (LSI), where the threshold voltage shifts are induced by radiation dosage. The FETs are formed in a relatively thin layer of silicon on an insulator film supported by a substrate. The compensating means includes a pair of sensor FETs formed integrally with the LSI device, an operational amplifier and a back gate formed opposite the channel regions of the FETs of the LSI device. The sensor FETs develop an output voltage that is applied as one input to the operational amplifier. A reference voltage, equal to the sensor output voltage prior to exposure to radiation, is applied as a second input to the operational amplifier. The amplifier output is applied to the back gate. The sensor output voltage changes as a result of radiation dosage. The amplifier output then changes, altering the back gate voltage in a manner tending to restore the sensor output to the original value. Such change in the back gate voltage compensates for radiation induced changes in the threshold voltages of the FETs of the LSI device.

REFERENCES:
patent: 4484076 (1984-11-01), Thomson
patent: 4763183 (1988-08-01), Ng et al.
patent: 4866498 (1989-09-01), Myers
patent: 4875086 (1989-10-01), Malhi et al.
patent: 4907053 (1990-03-01), Ohmi
patent: 4914491 (1990-04-01), Vu
IEEE SOS/SOI Technology Workshop, Oct. 1987, by Caviglia et al., p. 80.
IEDM Conference Proceedings, Dec. 1987, pp. 274-277, by Brown et al.

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