Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-03-24
1999-06-22
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 96, 257101, 257103, H01L 3300
Patent
active
059144963
ABSTRACT:
A radiation-emitting semiconductor diode of a buried hetero type having an active layer situated between two InP cladding layers with a confinement layer of limited Al content disposed between the active layer and one or both of the InP cladding layers. The active region has an emission wavelength above 1 .mu.m and forms part, together with the separate confinement layer and the InP cladding layers, of a strip-shaped region which is surrounded by a current-blocking third cladding layer of InP. The separate confinement layer(s) of the inventive diode includes a semiconductor material with a most 30% aluminum, and preferably at most 20% aluminum, or an aluminum-free semiconductor material. The diode has reduced starting current increases over time so as to increase the life of the diode. A method of manufacturing such a diode is also provided.
REFERENCES:
"Novel Etching Technique for a Buried Heterostructure GalnAs/AlGalnAs Quantum-Well Laser Diode", by A. Kasukawa et al, Appl. Phys. Lett. 59 (11), Sep. 9, 1991, pp. 1269-1271.
"Very Low Threshold Current OmCVC Grown 1.5.mu.m GalnAs/AlGalnAs Buried Heterostructure Quantum Well Laser Diode Using A Novel Etching Technique", by A. Kasukawa et al, LEOS 91, Proc. pp. 60-61, 1991.
Thijs Petrus J.A.
Van Dongen Teunis
Glenn Michael A.
Tran Minh Loan
Uniphase OPto Holdings, Incorporated
LandOfFree
Radiation emitting semiconductor diode of buried hetero type hav does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation emitting semiconductor diode of buried hetero type hav, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation emitting semiconductor diode of buried hetero type hav will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1709469