Radiation-emitting semiconductor diode and method of manufacturi

Details Radiation-emitting semiconductor diode and method of manufacturi Radiation-emitting semiconductor diode and method of manufacturi

1997-04-22

1999-11-16

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

059870478

ABSTRACT:
A radiation-emitting semiconductor diode in the InGaP/InAlGaP material system having a barrier for charge carriers situated between the active layer and one of the cladding layers. Such a diode has an emission wavelength between 0.6 and 0.7 .mu.m and is particularly suitable, when constructed as a diode laser, for serving as a radiation source in, for example, a system for reading and/or writing of optical discs, also because of an increased efficiency. The diode includes a barrier layer comprising only a single barrier layer of AlP, which can be manufactured with a good reproducibility and high yield. A thin AlP barrier layer, having a thickness less than 5 nm, for example 2.5 nm, still provides an excellent barrier.

REFERENCES:
patent: 5274656 (1993-12-01), Yoshida
patent: 5358897 (1994-10-01), Valster
patent: 5496767 (1996-03-01), Yoshida
patent: 5764668 (1998-06-01), Ishizaka et al.

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