Radiation-emitting semiconductor diode and method of manufacturi

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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372 45, 372 47, H01L 3300

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active

055459030

ABSTRACT:
Radiation-emitting semiconductor diodes are used as laser diodes or LEDs inter alia in optical disc systems, laser printers and bar code readers. The emission wavelength in these cases lies preferably in the visible range of the spectrum. Known diodes have an active layer (3A) and cladding layers (2, 4) which comprise either AlGaAs or InAlGaP. These known diodes have the disadvantage that they do not cover a portion of the visible spectrum between 880 and 600 nm.
A diode according to the invention is characterized in that the active layer (3A) comprises Al.sub.x Ga.sub.l-x As and the cladding layers (2, 4) comprise Al.sub.y Ga.sub.w In.sub.l-y-w P, while the active layer (3A) has such an aluminjure content (x) and such a thickness (d) that the wavelength of the photoluminescence emission lies between approximately 770 and 690 nm. This results in the availability of (laser) diodes covering the entire spectrum from approximately 880 nm to 600 nm which operate satisfactorily, supply a high power, and are easy to manufacture. Preferably, the active layer comprises a (multiple) quantum well structure of alternating quantum well layers and barrier layers, both comprising AlGaAs, but with different aluminium contents.

REFERENCES:
patent: 5321712 (1994-06-01), Itaya et al.
"High-Temperature Continuous Operation Above 200 C of GaAs Using An InGaAIP Cladding Layer" K. Itaya et al, Appl. Phys. Lett. 62 (18) May 3, 1993.
"AlGaInP Visible Laser Diodes Grown On Misoriented Substrates" H. Hamada et al, IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991.
"Semiconductor Lasers and Heterojunction Led's" H. Kressel et al, Academic Press, 1977, pp. 505-506.

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