Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1994-05-20
1995-01-10
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 13, 257 95, 257 96, 257 81, 257472, 372 45, 372 46, H01L 3300, H01S 319
Patent
active
053810244
ABSTRACT:
Radiation-emitting semiconductor diodes in the form of a laser diode or in the form of an LED form important components in data-processing systems. There is a particular need for diodes which emit in the visible part of the spectrum, which have a low starting current and which can be manufactured at low cost. A radiation-emitting semiconductor diode comprising above the active layer a cladding layer and a GaAs contact layer, into which a mesa-shaped strip is etched, and provided on the upper and the lower side with a conductive layer, which forms outside the mesa-shaped strip a junction forming a barrier with a subjacent semiconductor layer, partly satisfies the aforementioned requirements. Such a diode may further advantageously include an active layer and cladding layers, which contain (Al) GaInP, and an intermediate layer between the cladding layer and the contact layer, which extends outside the mesa-shaped strip and forms at these areas current-limiting regions due to the junction forming a barrier with the conducting layer. This intermediate layer offers the possibility to optimize the barrier effect, independent of the properties of the remaining semiconductor layers. The intermediate layer can include InGaP, InAlGaP or AlGaAs.
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Biren Steven R.
Guay John F.
Prenty Mark V.
U.S. Philips Corporation
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