Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-04-01
2008-04-01
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE27020, C257S565000, C438S336000
Reexamination Certificate
active
10535483
ABSTRACT:
The invention relates to a radiation-emitting semiconductor device (10) with a semiconductor body (1) and a substrate (2), wherein the semiconductor body (1) comprises a vertical bipolar transistor with an emitter region (3), a base region (4) and a collector region (5), which regions are each provided with a connection region (6, 7, 8), and the border between the base region (4) and the collector region (5) forms a pn-junction and, in operation, at a reverse bias of the pn-junction or at a sufficiently large collector current, avalanche multiplication of charge carriers occurs whereby radiation is generated in the collector region (5). According to the invention, the collector region (5) has a thickness through which transmission of the generated radiation occurs, and the collector region (5) borders on a free surface of the semiconductor body (1).
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patent: 6252286 (2001-06-01), Arai
patent: 2002/0047175 (2002-04-01), Tani et al.
Chen, J et al: Breakdown Behavior of GAAS/ALGAAS HBT'S, IEEE Transactions on Electron Devices. vol. 36, No. 10, Oct. 1989, pp. 2165-2172.
Klootwijk Johan Hendrik
Slotboom Jan Willem
Kebede Brook
Koninklijke Philips Electronics , N.V.
Liberchuk Larry
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