Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-07-10
2007-07-10
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000, C257S103000, C257S784000, C257S758000, C257S701000, C257S700000, C257SE51026, C257SE51032, C372S070000, C372S075000, C250S370110
Reexamination Certificate
active
10356109
ABSTRACT:
A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.
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Eisert Dominik
Fehrer Michael
Hahn Berthold
Härle Volker
Kaiser Stephan
Osram Opto Semiconductors GmbH
Williams Alexander Oscar
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