Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-01-30
2007-01-30
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S438000, C438S462000
Reexamination Certificate
active
10657841
ABSTRACT:
A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.
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Baur Johannes
Eisert Dominik
Fehrer Michael
Hahn Berthold
Härle Volker
Mulpuri Savitri
Osram GmbH
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