Radiation-emitting semiconductor component and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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Details

C257S096000, C257S098000, C257S103000, C438S022000, C438S046000, C438S047000, C438S036000, C438S037000

Reexamination Certificate

active

07005681

ABSTRACT:
A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) is applied.

REFERENCES:
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 6067309 (2000-05-01), Onomura et al.
patent: 6078064 (2000-06-01), Ming-Jiunn et al.
patent: 6489636 (2002-12-01), Goetz et al.
patent: 6492660 (2002-12-01), Uchida
patent: 0 723 303 (1996-07-01), None
patent: 0 977 279 (2000-02-01), None
patent: 2 344 461 (2000-06-01), None
patent: 2 344 461 (2000-06-01), None
patent: 06-196757 (1994-07-01), None
patent: 10-022586 (1998-01-01), None
patent: 11-243251 (1999-09-01), None
patent: 11-340505 (1999-10-01), None
S. Nakamura, “UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN”, IEICE Trans Electron., vol. E83-C, No. 4, Apr. 2000, pp. 529-535.
Härle et al., “GaN-Based LEDs and Laser on SiC”, Phys. Stat. Sol. (a) 180, 5 (2000).

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