Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-02-28
2006-02-28
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S098000, C257S103000, C438S022000, C438S046000, C438S047000, C438S036000, C438S037000
Reexamination Certificate
active
07005681
ABSTRACT:
A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) is applied.
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Bader Stefan
Dumitru Viorel
Härle Volker
Kuhn Bertram
Lell Alfred
Cohen & Pontani, Lieberman & Pavane
Le Dung A.
Osram Opto Semiconductors GmbH
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