Radiation-emitting semiconductor component

Details Radiation-emitting semiconductor component Radiation-emitting semiconductor component

2006-10-03

2006-10-03

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S084000, C257S088000, C257S089000, C257S101000, C257S103000

Reexamination Certificate

active

07115907

ABSTRACT:
A radiation-emitting semiconductor component with a layer structure (12) which includes a photon-emitting active layer (16), an n-doped cladding layer (14) and a p-doped cladding layer (18), a contact connected to the n-doped cladding layer (14) and a mirror layer (20) connected to the p-doped cladding layer (18). The mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

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